Inductively coupled (IC) PECVD system, the SENTECH SI 500 D for high density, low ion energy, and low-pressure plasma deposition of dielectric films and low-damage, low-temperature deposition for passivation layers.
The SENTECH SI 500 D Inductively Coupled (IC) PECVD System features exceptional plasma properties like high density, low ion energy, and low-pressure plasma deposition of dielectric films and low-damage, low-temperature deposition for passivation layers.
Low-stress ICPECVD of SiNx as GaN HEMT passivation and SiOx for trench filling can be performed with excellent uniformity and repeatability for applications in RF and power devices, photonics, and more with the system.
The SENTECH Planar Triple Spiral Antenna (PTSA) source is a unique feature of our high-end ICP process systems. The PTSA source generates uniform plasma with high ion density and low ion energy suited for high-quality and low-damage inductively coupled PECVD deposition of SiO2, Si3N4, a-Si, SiC, DLC, and doped layers.
Low etch rate, high breakdown voltage, low stress, no damage of substrate, and very low interface state density down to deposition temperatures of less than 100 °C allow for outstanding properties of the deposited films.
Substrate temperature setting and stability during the plasma deposition processes are demanding criteria for high-quality etching. The substrate electrode with dynamic temperature control in combination with Helium (He) backside cooling and substrate backside temperature sensing provides high-quality layers, deposited even at low temperatures.
The SENTECH SI 500 D ICPECVD System represents the leading edge for inductively coupled plasma (ICP) processing in both research and industry for plasma-enhanced chemical vapor deposition of dielectric films, a-Si, SiC, and other materials. The system comprises the ICP plasma source PTSA, a dynamic temperature-controlled substrate electrode, and a fully controlled vacuum system. A large variety of substrates from 100 mm wafers up to 200 mm diameter, as well as substrates on carriers can be handled by the flexible load lock built into the SENTECH SI 500 D. The single-wafer vacuum load lock and mechanical clamping guarantees stable conditions and allows for straightforward switching of processes.
MIM structure
with ICPECVD SiNx film
ICPECVD SiNx film on GaSb pixel –
high conformality of the deposition process
Low temperature SiNx –
ICPECVD film for lift-off process
SiO2 stripe deposited over Si edge –
high conformality of ICPECVD
The SENTECH SI 500 D ICPECVD System is configured to deposit SiO2, SiNx, SiOxNy, and a-Si films in a temperature range from room temperature up to 400 °C. Solutions are available for the deposition of TEOS, SiC, and other materials with liquid or gaseous precursors. The system is especially suited for the deposition of highly efficient protection barriers on organic materials at low temperatures and damage-free deposition of passivating films at well-defined temperatures. SENTECH offers different levels of automation ranging from vacuum cassette loading to one process chamber up to a six-port cluster configuration with different deposition and etch modules offering high flexibility and high throughput. The SENTECH SI 500 D is controlled by advanced hardware and SIA operating software, with a client-server architecture. A well-proven, reliable programmable logic controller (PLC) is used for the real-time control of all components.
While many SENTECH systems are single-chamber tools, each dedicated to a specific process type (e.g., ICP-RIE for etch, ICPECVD for deposition), cluster-style configurations can bring multiple modules together under shared vacuum handling, letting you do different processes in sequence without breaking vacuum.
In general, you will need electrical power, compressed air, purging nitrogen, cooling water and a process gas supply and exhaust. You will receive an installation manual with your system, which will outline all of the specific requirements of your purchased system. Our technical service team are available to offer support and answer questions.
SENTECH has an international network of distributors and technical service experts. We deliver globally, including Europe, Asia, Africa, North and South America. For more details on in-country representation, click here
SENTECH has a large team of application experts for both plasma process technology and thin film metrology. At our campus are two laboratories which are used to process and characterise customer samples, for system demonstrations and customer training. SENTECH offers application support for the lifecycle of your system. Learn more about our application support or contact the team.
Yes, SENTECH has two application labs in-house. You can contact our application team, who will share with you all the details and provide a sample analysis form for you to complete. Click here for further information and contact details.
Yes, SENTECH has a large network of technical service experts who offer in-country support for both plasma process technology and thin film metrology systems. Remote or on-site support is possible depending on your requirements. Click here to find out more or to contact the team.
SENTECH provides process modules that combine multiple processes, such as SIPAR for PECVD and PEALD, in a single reactor. The SI 500 ICP-RIE accommodates chlorine and fluorine-based etch chemistry in one process chamber. These configurations come with dedicated hardware, cleaning and conditioning recipes, as well as training. These solutions prioritise a smaller footprint and cost efficiency while maintaining practical process repeatability performance.
