ICP-RIE Plasma Etching:

Plasma_cryogenicSiPlasma_lithographyPlasma etching result of VCSEL structure using Ar-Cl2 gas mixtureEtching process result of Si-DRIE (SF6-C4F8-O2) post O2 cleanPlasma etching result of SF6-C4F8 based gas chopping process(IAP-Jena)ICP PECVD TEOS SiO2 film step coverage over Si ridge(IISB-Erlangen)ICP RIE result of SF6O2-C4F8-based Si gas chopping process

What's New?

SIPAR: New system for PEALD & ICPECVD in one reactor presented at ThGOT

SIPAR presentation at ThGOT

SENTECH offers leading edge plasma process technology equipment for etching and deposition, as well as thin film measurement instrumentation. We proudly presented our new combinatorial system “SIPAR” for PEALD & IC PECVD at the ThGOT conference (Thuringian surface days)....→read more

SENTECH is honoured at the "Award for small and medium sized enterprizes"

SENTECH honoured at Großer Preis des Mittelstands

Because of SENTECH`s constant economic success, and the innovative operating principles we have been honoured at the “Award for small and medium sized enterprises” in 2014. This famous German award by the Oskar Patzelt foundation dignifies enterprises for their performance in German economy, society, and as well the efforts for their employees...→read more


Instruments GmbH

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Phone: +49 (0)30 63 92 55 20
Fax: +49 (0)30 63 92 55 22
Email: info@sentech.de


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