Parallel Plate PECVD deposition system SI 500 PPD
The PECVD deposition tool SI 500 PPD facilitates standard processes for the chemical vapour deposition of SiO2, SiNx, SiOxNy, and a-Si in a temperature range of RT to
The SI 500 PPD features vacuum loadlock and dry pumping unit for oil-free, higher throughput, and cleanliness of chemical vapour deposition processes.
SENTECH control software
User-friendly powerful software is included with mimic GUI, parameter window, recipe editor, data logging, and user management.
The SI 500 PPD represents an advanced tool for plasma enhanced chemical vapor deposition of dielectric films, a‑Si, SiC, and other materials. It is based on planar capacitive coupled plasma source, vacuum loadlock, temperature controlled substrate electrode, optional available low frequency mixing, fully controlled oil-free vacuum system, advanced SENTECH control software using remote field bus technology, and a very user friendly general user interface for operating the SI 500 PPD.
A large variety of substrates from wafer up to
The SI 500 PPD plasma enhanced deposition tool is configured to deposit SiO2, SiNx, SiONx, and a-Si films in a temperature range from room temperature up to
SENTECH offers different levels of automation ranging from vacuum cassette loading to one process chamber up to six port cluster with different deposition and etch modules targeted to high flexibility or high throughput. The SI 500 PPD chemical vapour deposition system is available as process module on cluster configuration as well.
SI 500 PPD
- PECVD (Plasma enhanced chemical vapour deposition) plasma deposition tool
- With vacuum loadlock
- Up to
- Substrate temperature from RT to
- Optional low frequency mixing for low stress films
- Source for TEOS and other liquid precursors
- Dry pumping unit