Product Overview:

Plasma etching and deposition applications

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SI500C

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ALD_Reinraum

RIE Etching

Characteristics:   low damage, high rate, anisotropic etching, high density, low ion energy distribution
Materials: III-V compound semiconductors (GaAs, InP, GaN, InSb), silicon, silicon compounds (SiC, SiGe), dielectrics, quartz, glass, metals, polymers, sapphire
Applications: nanostructuring, MEMS, quantum devices, lasers, transistors, high frequency devices, microoptics
Plasma_cryogenicSiPlasma_lithographyPlasma_PhCSI591_anisotropicEtchlab_microstructures

PECVD Deposition

Characteristics:   low temperature, low damage deposition, low stress, low interface state density, low pin hole density, high breakdown voltage
Materials: dielectrics (SiO2, SiNx, SiOxNy), undoped and doped amorphous silicon (aSi:H), SiC
Applications: passivation, barriers, membranes, masks, isolation, optical coatings
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Atomic Layer Deposition

Characteristics:   conformal, pinhole- and particle-free, nano-scale controlled, low temperature deposition
Materials: oxides, nitrides, metals
Applications: passivation, 3D deposition, OLEDs, barriers, adhesion layers, optical coatings, high k applications, biomedical applications
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Documents   To get more information, please click here.

Documents   To get more information, please click here.