ICP Deposition System combining PECVD and ALD in one Reactor – SIPAR

The inductively coupled plasma (ICP) deposition system SIPAR combines plasma-enhanced chemical vapour deposition (PECVD) and atomic layer deposition (ALD) in one Reactor.

Key features & benefits

Sequential deposition

The SENTECH SIPAR ICP Deposition System combines atomic layer deposition (ALD) and inductively coupled plasma-enhanced vacuum deposition (ICPECVD) techniques in a sequential deposition approach in one reaction chamber. Users can leverage the advantages of both processes to achieve precise, conformal, and high-quality multilayer films with excellent control over film thickness, uniformity, selectivity, and deposition rate. This is particularly valuable in advanced organic electronics, microelectronics, nanotechnology, and semiconductor device research.

Flexible system architecture

The system was designed and developed for a wide range of deposition modes and processes using flexible system architecture. Hybrid multilayers composed of uniformly and conformal deposited ALD layers and rapidly grown ICPECVD films offer benefits in organic device technology, nanotechnology, and semiconductor research and industry.

Cost-effective

The efficient multilayer deposition capabilities and small footprint of the SENTECH SIPAR ICP make it highly cost-effective and versatile. It is ideal for use in R&D and academic institutions in organic device technology, nanotechnology, and semiconductor research.

The SENTECH SIPAR ICP Deposition system was developed and designed for a wide range of deposition modes and processes using flexible system architecture. The tool comprises the ICP plasma source PTSA, a dynamic temperature-controlled substrate electrode, and a fully controlled vacuum system. The system combines plasma-enhanced chemical vapour deposition (PECVD) and atomic layer deposition (ALD) in one Reactor.

Flexibility and modularity

The SENTECH SIPAR ICP Deposition System allows sequential deposition with ALD and inductively coupled plasma-enhanced chemical vapour deposition (ICPECVD) without transferring the substrate between different reaction chambers.

Hybrid multilayers composed of uniformly and conformal deposited ALD layers and rapidly grown ICPECVD films offer benefits in organic device technology, nanotechnology and semiconductor research. The SENTECH SIPAR ICP Deposition system enables efficient multilayer deposition for production, research and development and use in universities. Lower price, higher throughput and smaller footprint make the SENTECH SIPAR ICP Deposition system advantageous over a cluster solution.  

The SENTECH SIPAR system is controlled by advanced hardware and SIA operating software, with a client-server architecture. A well-proven, reliable programmable logic controller (PLC) is used for the real-time control of all components.

Configurations:

  • PECVD and ALD combined in one reaction reactor
  • With vacuum load lock
  • For up to 200 mm wafers
  • PTSA ICP plasma source for ICPECVD and PEALD
  • Direct backing pump operation for ALD
  • Turbo molecular pump operation for PECVD
  • Switchablebypass system for optimal process parameters
  • Substrate bias power (optional)
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