PEALD System with True Remote CCP Source – SI PEALD

The SENTECH True Remote CCP Source enables homogenous and conformal coating of sensitive substrates and layers at low temperatures. A high flux of reactive gas species is provided at the sample surface without UV radiation or ion bombardment.

Key features & benefits

PEALD for sensitive substrates

The SENTECH SI PEALD system with true remote plasma source enables homogenous and conformal coating of sensitive substrates and layers at low temperatures <100 °C. A high flux of reactive gas species is provided at the sample surface without UV radiation or ion bombardment.

Atomic layer deposition (ALD) for precise, conformal, and uniform deposition

The ALD deposition technique is characterised by its ability to deposit conformal and uniform films with precise control over thickness at the atomic level and continues to play a growing role in semiconductor devices such as the deposition of high-k dielectric materials. Some of the primary applications of ALD include sensors, optoelectronics and 2D materials.

In-situ diagnostics for process development and optimisation

In-situ diagnostics by the AL Real Time Monitor enables ultra-high resolution of single ALD cycles. The advantages are confirmation of the ALD regime, reduction of process time, and total cost of ownership. Spectroscopic ellipsometry is provided as in-situ diagnostics, too, having specific advantages for our atomic layer deposition systems.

Easy reactor cleaning

Regular reactor cleaning is essential for stable and repeatable atomic layer deposition processing. The reactor chamber is easily opened with the help of a lifting device for cleaning our atomic layer deposition systems.

Cluster integration

Atomic layer deposition systems are available as modules for SENTECH Cluster Tools. Our atomic layer deposition systems can be combined with SENTECH PECVD and etch systems for industrial applications. Cluster tools optionally feature cassette-to-cassette loading.

Glove box system integration

SENTECH ALD Systems are compatible with glove boxes from various suppliers.

PEALD for sensitive substrates

SENTECH ALD Systems enable thermal and plasma-enhanced operation. Our ALD systems can be configured for oxide, nitride, 2D material deposition. 3D structures can be homogenously and conformally coated. With ALD, PECVD, and ICPECVD, SENTECH offers plasma deposition technology for depositing films from the nanometer scale up to several microns.

Flexibility and modularity

SENTECH ALD Systems allow the combination of different thermal and/or plasma-enhanced ALD films to multilayer structures. Thermal and plasma-enhanced atomic layer deposition (PEALD) is supported in one reactor with an optimal shutter.

SENTECH offers leading-edge, ultra-fast, in-situ monitoring of layer-by-layer film growth using the AL Real Time Monitor as well as wide-range spectroscopic ellipsometry.

Configurations:

  • Load lock
  • True remote plasma source
  • Low-temperature processing using true remote plasma-enhanced ALD
  • Lifting device for opening reactor
  • Compatible with cluster integration

  • Load lock
  • Thermal ALD processing
  • Upgradable with the True Remote CPP plasma source
  • Compatible with cluster integration

  • Manual loading
  • Optional true remote plasma source
  • Low-temperature processing using true remote plasma-enhanced ALD

  • For systems with load lock
  • Glove box from various suppliers available

  • PEALD module is compatible for 3 to 6 port cluster configurations
  • Can combine with ICPECVD, ALE and ICP-RIE modules
Contact us and request a quote

Explore SENTECH products and applications

News