Key features & benefits
Precise low-ion‐energy / ion bias control with PTSA Source
The SI 500 ALE combines the SENTECH Planar Triple Spiral Antenna (PTSA) inductively coupled plasma (ICP) source with precise rf/bias control to achieve extremely low ion energies. This allows for highly controlled, low-damage etching at atomic-scale steps essential for ALE. Low-ion‐energy operations and ion-flux control minimise substrate damage, reduce defects, and permit more uniform and repeatable etch cycles.
Dynamic temperature and backside cooling control
SI 500 ALE offers dynamic temperature control of the substrate electrode, plus helium backside cooling and temperature sensing. This ensures that the substrate stays within tightly controlled temperature ranges even during challenging ALE cycles, which often involve alternating chemical/physical steps sensitive to thermal drift. Keeping the temperature stable helps in achieving reproducible etch rates and smoothness. Dynamic temperature control with helium backside cooling ensures flexible performance for the SI 500 ICP-RIE tool, both for ALE and continuous etch applications.
In-situ monitoring and efficient gas handling
For ALE, being able to detect endpoints, monitor reactions in real-time, and switch gases cleanly and reliably between steps is crucial. The SI 500 ALE configuration provides optional real-time monitoring tools with in-situ ellipsometry. Plus, the system offers efficient gas control/switching, which supports precise control over the cyclic ALE steps. This reduces cycle time, improves yield, and helps detect and avoid over-etching or process drift.
The SI 500 ALE is engineered for maximum flexibility and modularity. The SI 500 ALE system supports the processing of a wide range of materials critical to advanced semiconductor and nanotechnology applications. These include, but are not limited to, III–V and II–VI compound semiconductors (such as GaAs, InP, AlGaN, GaN, and InSb), dielectrics, silicon-based materials (Si, SiC), quartz, glass, and metals.
Flexibility and modularity
The SENTECH SI 500 ALE System represents the leading edge of atomic layer etching technology for both research and industrial nanofabrication. Designed to deliver atomic-scale precision, the system integrates the SENTECH Planar Triple Spiral Antenna (PTSA) plasma source with independent RF bias control, enabling precise ion energy tuning essential for sub-nanometre precision ALE processes. In addition to the ALE configuration, the SENTECH SI 500 system in ICP-RIE and cryogenic mode also offers continuous etching capabilities. The combination of continuous etching and ALE to one process supports a controlled, low-damage approach to stopping the etch process as it approaches a critical interface or layer.
The SI 500 ALE configuration features a dynamic temperature-controlled substrate electrode, ensuring process stability and repeatability across cyclic etch steps. Its fully automated vacuum and gas handling system allows fast, contamination-free switching between reactant and purge gases, supporting reliable ALE cycles. The system can optionally be fitted with the SENTECH AL Real Time Monitor for fast and efficient process monitoring, development and optimisation.
The SENTECH SI 500 System with ALE extension is controlled by advanced hardware and SIA operating software, with a client-server architecture. A well-proven, reliable programmable logic controller (PLC) is used for the real-time control of all components.
Configurations:
- ICP-RIE plasma etch system
- With compact vacuum load lock
- For up to 200 mm wafers
- Substrate temperature from -20 °C to 250 °C
- Optional: -30 °C to 200 °C
- Cryogenic ICP plasma etch system
- With vacuum load lock
- Substrate temperature from -150 °C to 80 °C (LN2 cooling)
- Substrate temperature -10 °C to 150 °C for Bosch process with circulation chiller (optional)
- Automatic switching unit for comfortable change between cryogenic etch and Bosch process
- ICP plasma etch system for multi-wafers and large substrates
- With vacuum load lock
- For up to 380 mm wafers
- Deep reactive ion etch system for gas chopping process
- Fast gas replacement for low scalloping and smoother sidewalls
- Efficient ICP source coupling for fast etch rate
- For up to 150 mm wafers
