Amorphous Silicon Carbide (a-SiC:H) films are extensively used in solar cells and as passivation layers in sensors for high-temperature applications. In addition, thanks to its good mechanical properties and chemical resistance silicon carbide (SiC) is widely used as a protection layer against abrasion and chemical corrosion such as in MEMS applications. This application note will demonstrate the successful deposition of a-SiC:H layers using the SENTECH SI 500 D ICPECVD System. The procedure comprises the deposition of a-SiC:H layers by ICPECVD on a silicon wafer with a thickness in the range of ca. 200-600 nm with different process conditions. Characterisation was done by determining the optical layer properties using ellipsometry and measurement of the layer stress. The results demonstrate the excellent deposition properties of an SI 500 D system with a SiH₄/CH₄-based deposition process for a-SiC:H films.