SENTECH has further advanced its Plasma-Enhanced Atomic Layer Deposition (PEALD) system, SI PEALD technology, with the development of a modular plasma configuration, enabling operation with either a True Remote Capacitively Coupled Plasma (CCP) source or a Planar Triple Spiral Antenna (PTSA) Inductively Coupled Plasma (ICP) source.
This flexibility allows users to tailor the plasma characteristics to their specific process requirements:
- CCP source: Provides a high density of reactive gas species at the sample surface while completely suppressing UV radiation and ion bombardment. This ensures pristine film growth conditions, particularly advantageous for sensitive materials.
- ICP source (PTSA design): Delivers a high flux of reactive species with enhanced plasma uniformity and efficient coupling, broadening the range of process windows available for advanced thin film deposition.
The SI PEALD system supports deposition on substrates up to 200 mm in diameter, making it well-suited for both research and development as well as small-scale production environments.
Key enabling technologies include:
- SENTECH AL Real Time Monitor: Advanced in-situ laser ellipsometry for real-time, high-resolution process monitoring and precise control of film growth.
- Integrated load lock: Ensures clean, automated wafer handling and seamless operation within a controlled environment.
- Cluster integration: The SI PEALD system can be incorporated into SENTECH cluster technology, enabling combination with ICP-RIE, ICPECVD, and PEALD processes in a single vacuum platform. This integrated configuration maximises process flexibility and throughput for both R&D and production applications.
The SENTECH SI PEALD system offers configurable plasma sources, including the ICP option, to provide unmatched versatility in plasma-enhanced atomic layer deposition, while ensuring high-quality film deposition across a wide range of applications.
