Product Overview:

Plasma etching and deposition applications




RIE Etching

Characteristics:   low damage, high rate, anisotropic etching, high density, low ion energy distribution
Materials: III-V compound semiconductors (GaAs, InP, GaN, InSb), silicon, silicon compounds (SiC, SiGe), dielectrics, quartz, glass, metals, polymers, sapphire
Applications: nanostructuring, MEMS, quantum devices, lasers, transistors, high frequency devices, microoptics

PECVD Deposition

Characteristics:   low temperature, low damage deposition, low stress, low interface state density, low pin hole density, high breakdown voltage
Materials: dielectrics (SiO2, SiNx, SiOxNy), undoped and doped amorphous silicon (aSi:H), SiC
Applications: passivation, barriers, membranes, masks, isolation, optical coatings

Atomic Layer Deposition

Characteristics:   conformal, pinhole- and particle-free, nano-scale controlled, low temperature deposition
Materials: oxides, nitrides, metals
Applications: passivation, 3D deposition, OLEDs, barriers, adhesion layers, optical coatings, high k applications, biomedical applications

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