ICP-RIE Plasma Etching:

Plasma_cryogenicSiPlasma_lithographyPlasma etching result of VCSEL structure using Ar-Cl2 gas mixtureEtching process result of Si-DRIE (SF6-C4F8-O2) post O2 cleanPlasma etching result of SF6-C4F8 based gas chopping process(IAP-Jena)ICP PECVD TEOS SiO2 film step coverage over Si ridge(IISB-Erlangen)ICP RIE result of SF6O2-C4F8-based Si gas chopping process

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SENTECH took part in the world’s largest photovoltaics exhibition “SNEC”, hold from May 28-30 in Shanghai, China. Information were given about the next generation of the SENperc PV, the well-known laser ellipsometer SE 400adv PV as well as on the measurement tool SenSol for large CIGS thin film solar cells.  →read more

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