Key features & benefits
The SENTECH Depolab 200 is a cost-effective plasma-enhanced chemical vapour deposition (PECVD) system combining the advantages of a parallel plate electrode design for uniform film deposition with the flexible direct load design. Starting with standard applications on 2” to 200 mm wafers and sample pieces.
Cost-effectiveness
The system combines parallel plate plasma source design with direct load.
Upgradeability
According to its modular design, the SENTECH Depolab 200 is upgradeable with a larger pumping unit, low-frequency power supply for stress control, and additional gas lines.
Operating software
User-friendly powerful software is included with GUI, parameter window, recipe editor, data logging, and user management.
The SENTECH Depolab 200 PECVD system features a robust design, reliability, and flexible software and hardware. Different processes have been developed on the system e. g. for high-quality silicon nitride and silicon oxide layer deposition. The system comprises the reactor unit with gas box, control electronics, computer, backing pump, and main connection box.
Flexibility and modularity
The SENTECH Depolab 200 PECVD System is configured to deposit SiO2, SiNx, SiONx, and a-Si films in a temperature range up to 400 °C. The system is especially suited for the deposition of dielectric films for etching masks, membranes, electrically isolating films, and others.
The SENTECH Depolab 200 is controlled by advanced hardware and SIA operating software, with a client-server architecture. A well-proven, reliable programmable logic controller (PLC) is used for the real-time control of all components.
Configurations:
- Plasma-enhanced chemical vapour deposition (PECVD) tool
- Open lid loading
- For up to 200 mm wafers
- Substrate temperature up to 400 °C
- Optional low-frequency mixing for low-stress films
- Dry pumping unit
- Small footprint
