ICP-RIE etching

SI 500 - PTSA ICP plasma etcher for low damage, high aspect ratio and high rate etching of semiconductors and dielectrics

SI 500 C - cryogenic PTSA ICP plasma etcher for DRIE with unsurpassed small side wall roughness at substrate temperatures between -150°C and 400°C

SI 500-300 - PTSA-ICP plasma etcher for 300 mm diameter substrates and carriers