SI 591
The plasma etching system SI 591 is designed for modularity and process flexibility in the area of III/V and Si processing. SENTECH's SI 591 is well proven in the most important etching processes of different technologies and can be accomodated a wide variety of etch processes.
It is characterized by:
It is characterized by:
- high homogeneity and excellent reproducibility of the etch processes
- vacuum load lock
- computer controlled operation
- SENTECH’s advanced plasma equipment operating software
- data logging
- through-the-wall installation
- endpoint detection
System configuration:
- Parallel plate reactor driven at 13.56 MHz (600 W)
- Shower head gas inlet
- Vacuum load lock with pick-and-place
- Insulated, cooled and heated electrode (-25ºC up to 80ºC)for substrates of 4"-8" diameter, substrate carriers for smaller pieces or wafer and multi-wafer loading.
- PLC control, Pentium PC (Windows XP)
- SENTECH's advanced plasma equipment operation software
Features:
- Automated and manual process control
- Recipe controlled etch processes
- Intelligent process control by jumps, loops, and calls in recipes
- Different access levels
- Data logging
- LAN and internet access
- Windows XP operation software
Options:
- Additional gas lines
- PE electrode
- Reactor heating (outside)
- Temperature controlled substrate electrode (+20ºC ... +80ºC)
- Circular chiller (5ºC ... 40ºC)
- CS chemical exhaust cleaning
- Cassette to cassette handling
- Through-the-wall installation
- Interferometric endpoint detection and etch depth measuring system
- In-situ ellipsometry (SE 401, SE 801)
Please contact us for more information.