Plasma deposition and etching

Low stress, high rate, low temperature and low damage plasma enhanced chemical vapor deposition (PECVD)

• SI 500 D - ICPECVD system for high plasma density
• SI 500 PPD - PECVD parallel plate configuration with frequency mixing
• Optical process monitoring

Plasma deposition of: SiO₂, SiNx, SiOxNy, TEOS, a-Si:H,
µ-Si:H, and DLC 

Low damage, high rate, temperature controlled plasma etching of MEMS, silicon, micro-optics, semiconductors, dielectrics, organic and metal films 

ICP-RIE

• SI 500
• SI 500 C 
• SI 500-300 

RIE

• Etchlab 200
• SI 591
• SI 100

Etch (ICP, RIE) modules, deposition modules (PECVD, ALD), cassette stations and productive robots can be combined to cluster systems for R&D and production to meet the requirements of closed processing and high throughput

• Fully automated ICP and RIE etchers for compound semiconductor processing
• Large area substrate processing for masks and micro-optics
• High throughput chromium etch cluster

Cluster tool with etch and deposition modules

Small cluster tool with 3 process modules

Laser ellipsometry, interferometry and optical spectroscopy are offered for insitu and inline monitoring of film growth and erosion, etch depth measurement and endpoint control