Plasma Etching Systems

ICP RIE Etching system SI 500

The high end plasma etching system SI 500 uses an inductively coupled plasma with low ion energy for low damage etching and nano structuring. Repeatable and stable plasma etching conditions are ensured by dynamic temperature control over a wide temperature range. Cryogenic and room temperature, gas chopping processes are applied for deep reactive plasma etching (Si, III-V semiconductors, MEMS). Details for SI 500 ICP-RIE here!

Etchlab200

The plasma etching system EtchLab 200 features the benefits of cost effective direct loading for RIE.

The EtchLab 200 allows easy and quick sample loading for batch processing on carriers or direct loading onto the electrode. Small footprint, modularity and flexibility are design features of RIE plasma etching system. Details for EtchLab 200 here!

SI591

With the SI 591 compact, a variety of chlorine and fluorine based plasma etching processes can be performed reproducibly with a vacuum load lock and fully computer controlled processing. The SI 591 compact is characterized by a small footprint and flexible design for RIE plasma etching, e.g. the SI 591 compact can be integrated into a cluster system. Details for SI 591 compact here!