Plasma etching, deposition

SI 500 – PTSA ICP plasma etcher for low damage, high aspect ratio, high rate etching of semiconductors and dielectrics.

SI 500 C – cryogenic PTSA ICP plasma etcher for DRIE with unsurpassed small side wall roughness

SI 500-300 - PTSA-ICP plasma etcher for 300 mm diameter substrates and carriers

Cluster tool -  ICP etchers, RIE etchers, PECVD and ICPECVD deposition systems can be combined into one cluster tool

Etchlab 200 – upgradeable low cost RIE plasma etcher.

SI 591 – advanced RIE plasma etcher for chlorine and fluorine chemistry

SI 100 - open lid RIE plasma etcher for large area samples and large number of wafers, respectively.

SI 500 D – ICPECVD system for high plasma density deposition of dielectric films with unsurpassed mechanical, electrical and chemical poperties at low temperatures (80°C-130°C).

SI 500 PPD – PECVD plasma deposition system for dielectric films with stress control.