SI 100
Key Features:
- Cost-effective RIE plasma etcher
- Large substrate electrode
- Start-stop operation
- High throughput
- Compact design
Product information:
The SI 100 Plasma Etcher is a powerful tool for standard RIE processes which require high flexibility in substrate handling. Productive and reliable isotropic and anisotropic resist etch processes for 4" wafers (as mainly used in GaAs technology) as well as pre-metallization etch and surface cleaning processes can be performed. This system is well proven in the production of GaAs devices. Up to seven 4" wafers can be processed in a single run.
The aluminum reactor chamber of 360mm inner diameter contains a substrate electrode of 320mm diameter. The wafers are loaded manually on the substrate electrode into special designed uniformity carriers.
Two gas lines for oxygen and argon, respectively, are controlled manually using needle valves. The reactor chamber is evacuated by a rotary pump with 16 m3 / h pumping speed and the pressure is measured using a Pirani manometer.
The plasma is generated using a 300W rf generator at 13.56 MHz. The plasma impedance is automatically matched to the 50 Ohm output of the generator by an automatic matching unit. Gas flows, pressure and rf power are tuned to the specified process by SENTECH Instruments GmbH.
A compact programmable relay control unit enables the automatic process run after pressing the start button. At the end of the process the reactor chamber is vented automatically.
The stand alone system is very compact with low footprint.
The SI 100 Plasma Etcher is a powerful tool for standard RIE processes which require high flexibility in substrate handling. Productive and reliable isotropic and anisotropic resist etch processes for 4" wafers (as mainly used in GaAs technology) as well as pre-metallization etch and surface cleaning processes can be performed. This system is well proven in the production of GaAs devices. Up to seven 4" wafers can be processed in a single run.
The aluminum reactor chamber of 360mm inner diameter contains a substrate electrode of 320mm diameter. The wafers are loaded manually on the substrate electrode into special designed uniformity carriers.
Two gas lines for oxygen and argon, respectively, are controlled manually using needle valves. The reactor chamber is evacuated by a rotary pump with 16 m3 / h pumping speed and the pressure is measured using a Pirani manometer.
The plasma is generated using a 300W rf generator at 13.56 MHz. The plasma impedance is automatically matched to the 50 Ohm output of the generator by an automatic matching unit. Gas flows, pressure and rf power are tuned to the specified process by SENTECH Instruments GmbH.
A compact programmable relay control unit enables the automatic process run after pressing the start button. At the end of the process the reactor chamber is vented automatically.
The stand alone system is very compact with low footprint.
Specifications:
| Reactor: | 370mm inner diameter, 30mm distance of the plates, Material: AlMgSi 1.0; integrated shower head |
| Gas lines: | Two controlled gas lines |
| Controls: | Programmable relay |
| Wafer dimensions: | 7 x 4" (other on request) |
| Size: | 550 x 595 x 600 ( B x H x T, [mm]) |
| Mains: | 3 x 400 V ac (50 Hz), 16 A |
Please contact us for more information.