SE 400adv
Multiple Angle Laser Ellipsometer SE 400advanced
The multiple angle laser ellipsometer SE400advanced provides film thickness, refractive index and absorption index at the HeNe laser wavelength 632,8 nm with an extraordinary precision and accuracy. The SE400advanced can be utilized to characterize single films, multiple layer stacks and bulk materials (substrates).
The multiple angle laser ellipsometer SE400advanced provides film thickness, refractive index and absorption index at the HeNe laser wavelength 632,8 nm with an extraordinary precision and accuracy. The SE400advanced can be utilized to characterize single films, multiple layer stacks and bulk materials (substrates).
- Extraordinary high stability and accuracy due to stable laser light source, temperature stabilized compensator setup, polarizer tracking and ultra low noise detector
- Highly precise sample alignment with optical auto collimating telescope and microscope
- Fast and comfortable measurement at a selectable, application specific single angle of incidence
- Fully integrated support of multiple angle measurements for more complex applications and absolute thickness
- Comprehensive package of predefined applications representing microelectronics, photovoltaic (solar cells), magnetic media, life science and more
Specifications:
- Laser wavelength 632.8 nm
- 150 mm (z-tilt) stage
- Goniometer with angles of incidence set in 5º steps
- Auto collimating telescope / microscope
- Small footprint
- Ethernet interface to PC
SE 400advanced software features:
- predefined applications
- multiple angle measurements
- large material database
- graphical feedback of goodness of fit
- supports different languages (Asian characters on request)
The SE400advanced is designed to tap the full potential of the method ellipsometry and to push the limits. The core concept of the SE400advanced with highly phase stabilized compensator, computer controlled frequency stabilized rotating analyzer and automated polarizer optimum positioning allows for the measurement of ultra thin films and surface roughness on almost any kind of absorbing or transparent substrate with a flat, mirror - like surface.
1) precision is defined as standard deviation (1 sigma) of 30 measurements
2) long term stability is measured over 24 hours at 90° position
| Precision1) of ψ, Δ at 90° (transmission) position: | δ(ψ)=0.002°, δ(Δ)=0.002° |
| Long term stability2): | δ(ψ)=±0.1°, δ(Δ)=±0.1° |
| Precision1) of film thickness: | 0.1 Å for 100 nm SiO2 on Si |
| Precision1) of refractive index: | 5×10-4 for 100 nm SiO2 on Si |
1) precision is defined as standard deviation (1 sigma) of 30 measurements
2) long term stability is measured over 24 hours at 90° position
Options:
- 30 µm micro spot
- Manual x-y stage with 150 mm travel,
- Mapping (x-y, up to 200 mm, vacuum chuck)
- Large area mapping (300 mm and higher)
- Video camera for alignment in lieu of eyepiece, frame grabber, microscopic image
- Liquid cell
- Auto focus in combination with mapping option
- Film Thickness Probe FTPadvanced with 80 µm spot size
- Second wavelength (405 nm or 1550 nm)
- SIMULATION software
- Set-up for the measurement of textured silicon solar cells
Brochure (SE 400adv)