SI 500 C

PTSA ICP Cryo Etcher SI 500 C
SI 500 C The SI 500 C PTSA ICP Cryo Etcher is the ideal tool for high rate etching processes in silicon micromachining, microfluidics and microoptics.

It is characterized by:
  • high etch rate
  • low damage 
  • high aspect ratio
  • (P)lanar (T)riple (S)piral (A)ntenna PTSA source
  • large substrate temperature range from -150ºC to 400°C
  • SENTECH’s advanced plasma equipment operating software
  • through-the-wall installation
  • endpoint detection
 
System Configuration:
  • Cryo-electrode (-150ºC...400ºC) for 6" wafers or carriers (smaller wafers and pieces on carrier
  • He-backside "cooling", mechanical clamping
  • Circular gas inlet
  • PTSA ICP source (13.56 MHz, 1200 W)
  • RF bias (13.56 MHz, 600 W)
  • Magnetic liner for higher plasma densities
  • Vacuum load lock with pick-and-place
  • High speed pumping system with gas flow independent pressure control
  • Substrate electrode with variable z-position (50mm)
  • Remote field control via serial field bus
  • Pentium PC (Windows XP)
  • SENTECH’s advances plasma equipment operating software (data logging, LAN access, user defined recipes, Windows XP)
 
Options:
  • Through-the-wall installation
  • Endpoint detection
 

Please contact us for more information.