SI 500
The SI 500 has been developed for high rate and low damage plasma etch processes, especially in III-V and microoptical applications.
It is characterized by:
- High etch rate
- Low damage
- High aspect ratio
- Superior homogeneity
- (P)lanar (T)riple (S)piral (A)ntenna PTSA source
- Remote field control via serial field bus
- Applications for III-V compounds, microoptics, microsystems
- SENTECH’s plasma process systems operating software
- Through-the-wall installation
- Interferometric endpoint detection and etch depth measurement
System configuration:
- PTSA ICP source (13.56 MHz, 1200 W) with integrated automatic matching network
- RF bias (13.56 MHz, 600 W)
- Circular gas inlet integrated into the PTSA source
- High speed pumping system with gas flow independent pressure control
- Vacuum load lock with pick-and-place
- Insulated, cooled and heated (-30ºC up to 250ºC) electrode for 6" substrates or 6" carriers (2", 3", 4" wafers, sample pieces)
- He-backside „cooling„, mechanical clamping
- dynamic temperature control
- Remote field control via serial field bus
- Pentium PC (Windows XP)
- SENTECH’s plasma process systems operating software
Features:
- Automated and manual process control
- Recipe controlled etch processes
- Intelligent process control by jumps, loops, and calls in recipes
- Different access levels, advanced user management
- Data logging
- LAN and internet access for remote servicing
- Windows XP operation software
Options:
- Additional as lines
- Quartz window for PTSA source
- Window for in-situ monitoring through PTSA source
- Circulation chiller for substrate temperature control (-30ºC to 80ºC)
- Magnetic liner for higher plasma densities
- External lifting appliance for plasma source and magnet lines
- Spacer ring
- Cassette to Cassette handling
- Through-the-wall installation
- Interferometric endpoint detection and etch depth measuring system
Please contact us for more information.