R & D
Materials characterization of dielectrics, semiconductors, metals and organics by optical methods is the is the key application of reflectometers and ellipsometers in R & D. Besides the precise measurement of thickness and optical constants the investigations of optically sensitive material properties are especially important.
FTPadvanced reflectometer Fast and accurate measurement of
- reflectance of samples in the UV-VIS_NIR spectral range
- composition of materials (e.g. AlxGa1-xAs, SixGe1-x)
- band gap
- refractive index and extinction coefficient
- thickness of single films and layer stacks
Laser ellipsometer SE 400advanced
- Highest available accuracy and sensitivity for measurement of film thickness and refractive index
- Measurement of refractive index of films down to 2-3 nm film thickness
- Measurement of film thickness and refractive index of films deposited on rough surfaces (e.g. silicon solar cells, sprayed aluminum)
Spectroscopic ellipsometer SENresearch Largest available spectral range from 190 nm – 2500 nm
Measures:
- Ellipsometric data
- Reflectance
- Transmittance
- Depolarization
- Anisotropy
- Mueller matrix
- Phase retardation
Set-up with cryostat for temperature dependent analysis of optical constants and material properties between 80 K (optional 5 K) and 700 K sample temperature.
A goniometer is optional available.
IR ellipsometer SENDIRA
Spectral range: 2 µm – 25 µm
Measures:
- Epitaxial layers (e.g. silicon)
- Concentration gradient of dopants
- Carrier concentration and mobility
- Chemical composition and structure of organics and dielectrics
- Film thickness, especially on rough substrates
- Molecule orientation
In-situ spectroscopic ellipsometer SE 801
Spectral range: 280 nm – 850 nm.
Fast and very accurate kinetic measurements.
Measurement of growth rate and growth processes in:
-
MBE ( e.g semiconductors)
- ALD (e.g. high k, metals and metal nitride materials)
- Sputtering and deposition systems for dielectric, organic and metallic films